IRLM220ATF
MOSFET N-CH 200V 1.13A SOT223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi IRLM220ATF is a N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 1.13A at 25°C ambient temperature, with a maximum power dissipation of 2W (Tc). The low on-resistance (Rds On) of 800mOhm at 570mA and 5V gate drive voltage contributes to reduced conduction losses. With a gate charge (Qg) of 15 nC and input capacitance (Ciss) of 430 pF, the IRLM220ATF offers efficient switching characteristics. Packaged in a SOT-223-4 (TO-261-4, TO-261AA) surface mount format and supplied on tape and reel, this MOSFET is suitable for use in industrial, automotive, and consumer electronics power management systems. It operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.13A (Ta) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 570mA, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V |