IRLM210ATF
MOSFET N-CH 200V 770MA SOT223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi IRLM210ATF is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 200 V and a continuous drain current (Id) of 770mA at 25°C. With a maximum Power Dissipation of 1.8W (Tc), it offers efficient thermal management. The Rds On specification is 1.5 Ohms maximum at 390mA and 5V gate drive. Key characteristics include a Gate Charge (Qg) of 9 nC maximum at 5V and an Input Capacitance (Ciss) of 240 pF maximum at 25V. The device is housed in a SOT-223-4 (TO-261-4) surface mount package, suitable for automated assembly. Operating temperature range is -55°C to 150°C. This MOSFET is utilized in industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 770mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 390mA, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V |
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