IRLM120ATF
MOSFET N-CH 100V 2.3A SOT223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi IRLM120ATF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 2.3 A at 25°C. Its low on-resistance, specified at a maximum of 220 mOhm at 1.15 A and 5 V, combined with a maximum power dissipation of 2.7 W (Tc), makes it suitable for power management circuits. The device has a Gate Threshold Voltage (Vgs(th)) of 2 V at 250 µA and a maximum Gate-Source Voltage (Vgs) of ±20 V. Key capacitances include Input Capacitance (Ciss) of 440 pF at 25 V and Gate Charge (Qg) of 15 nC at 5 V. The IRLM120ATF is housed in a SOT-223-4 (TO-261-4, TO-261AA) surface-mount package and operates across a temperature range of -55°C to 150°C. It is commonly utilized in automotive, industrial automation, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 1.15A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V |
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