IRLI510ATU
MOSFET N-CH 100V 5.6A I2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi IRLI510ATU is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 5.6A at 25°C (Tc). The IRLI510ATU offers a maximum on-resistance (Rds On) of 440mOhm at 2.8A and 5V gate drive. With a gate charge (Qg) of 8 nC at 5V and input capacitance (Ciss) of 235 pF at 25V, it provides efficient switching characteristics. Power dissipation is rated at 3.8W (Ta) and 37W (Tc). Packaged in a TO-262-3 Long Leads (I2PAK) configuration, it supports through-hole mounting. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 2.8A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 37W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 235 pF @ 25 V |
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