IRL640A
MOSFET N-CH 200V 18A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi IRL640A is a high-performance N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-to-Source Voltage (Vdss) of 200V and a continuous drain current (Id) of 18A at 25°C, with a maximum power dissipation of 110W. The Rds On is specified at a maximum of 180mOhm at 9A and 5V gate drive. Key parameters include a gate charge (Qg) of 56 nC at 5V and input capacitance (Ciss) of 1705 pF at 25V. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for power switching, motor control, and power supply designs across industrial and automotive sectors. It is supplied in a TO-220-3 package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 9A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1705 pF @ 25 V |
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