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IRL630A

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IRL630A

MOSFET N-CH 200V 9A TO220-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi IRL630A is a N-Channel Power MOSFET designed for high-efficiency switching applications. This through-hole component features a Drain-Source Voltage (Vdss) of 200V and a continuous drain current (Id) of 9A at 25°C, with a maximum power dissipation of 69W (Tc). The Rds On is specified at a maximum of 400mOhm at 4.5A and 5V gate drive. Key parameters include a gate charge (Qg) of 27 nC at 5V and input capacitance (Ciss) of 755 pF at 25V. It operates within a temperature range of -55°C to 150°C and is supplied in a standard TO-220-3 package. This MOSFET is utilized across various industrial sectors, including power supplies, motor control, and lighting.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Rds On (Max) @ Id, Vgs400mOhm @ 4.5A, 5V
FET Feature-
Power Dissipation (Max)69W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds755 pF @ 25 V

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