IRL530A
MOSFET N-CH 100V 14A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi IRL530A is an N-Channel Power MOSFET designed for efficient power switching applications. This through-hole component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 14A at 25°C, with a maximum power dissipation of 62W (Tc). It offers a low on-resistance (Rds On) of 120mOhm at 7A and 5V Vgs, facilitated by a gate charge (Qg) of 24 nC at 5V. The input capacitance (Ciss) is 755 pF at 25V. Operating across a temperature range of -55°C to 175°C (TJ), the IRL530A is housed in a standard TO-220-3 package. This device finds application in industries such as industrial automation and consumer electronics, where robust power management is critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 7A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 62W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 755 pF @ 25 V |
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