IRL510A
MOSFET N-CH 100V 5.6A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi IRL510A is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 5.6A at 25°C, with a maximum power dissipation of 37W (Tc). The IRL510A exhibits a low on-resistance of 440mOhm at 2.8A and 5V gate drive, coupled with a gate charge (Qg) of 8 nC at 5V. It has an input capacitance (Ciss) of 235 pF and a gate-source breakdown voltage (Vgs(Max)) of ±20V. The threshold voltage (Vgs(th)) is a maximum of 2V at 250µA. This TO-220-3 packaged device is suitable for through-hole mounting and operates across a wide temperature range of -55°C to 175°C (TJ). Applications include power supply units, motor control, and general-purpose switching in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 2.8A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 235 pF @ 25 V |
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