IRFW630BTM-FP001
MOSFET N-CH 200V 9A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi IRFW630BTM-FP001 is an N-Channel Power MOSFET designed for demanding applications. This device features a 200V drain-source voltage (Vdss) and a continuous drain current (Id) of 9A at 25°C (Tc). With a maximum on-resistance (Rds On) of 400mOhm at 4.5A and 10V Vgs, it offers efficient switching performance. The IRFW630BTM-FP001 has a gate charge (Qg) of 29 nC at 10V and an input capacitance (Ciss) of 720 pF at 25V. Power dissipation is rated at 3.13W (Ta) and 72W (Tc). This MOSFET is housed in a TO-263-3, D2PAK (2 Leads + Tab) surface mount package and operates across a temperature range of -55°C to 150°C. It finds use in industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 72W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 720 pF @ 25 V |
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