IRFS450B
MOSFET N-CH 500V 9.6A TO3PFManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi IRFS450B is an N-Channel Power MOSFET designed for demanding applications. This component features a 500V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 9.6A at 25°C (Tc). With a maximum on-resistance (Rds On) of 390mOhm at 4.8A and 10V Vgs, it offers efficient power switching. The device is housed in a TO-3PF package, suitable for through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 113 nC at 10V and input capacitance (Ciss) of 3800 pF at 25V. Its maximum power dissipation is rated at 96W (Tc), and it operates across a wide temperature range from -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units, industrial motor control, and high-voltage switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 4.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 25 V |
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