IRFR420BTM
MOSFET N-CH 500V 2.3A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi IRFR420BTM is an N-Channel Power MOSFET designed for high-voltage switching applications. Featuring a Drain-to-Source Voltage (Vdss) of 500 V and a continuous Drain current (Id) of 2.3 A at 25°C, this component offers a maximum on-resistance (Rds On) of 2.6 Ohms at 1.15 A and 10 V gate drive. The device supports a gate-source voltage (Vgs) range of ±30V and has a threshold voltage (Vgs(th)) of 4V at 250µA. Key parameters include a gate charge (Qg) of 18 nC at 10 V and an input capacitance (Ciss) of 610 pF at 25 V. With a power dissipation capability of 41W at 25°C case temperature, the IRFR420BTM is housed in a TO-252AA (DPAK) surface mount package, suitable for use in power supplies, lighting, and industrial motor control. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.6Ohm @ 1.15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 41W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 610 pF @ 25 V |
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