IRFR130ATM
MOSFET N-CH 100V 13A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi IRFR130ATM is an N-Channel Power MOSFET designed for demanding applications. This component offers a continuous drain current capability of 13A at 25°C (Tc) and a drain-source voltage (Vdss) of 100V. Featuring a low Rds(on) of 110mOhm at 6.5A and 10V, it minimizes conduction losses. The device has a gate charge (Qg) of 36 nC at 10V and input capacitance (Ciss) of 790 pF at 25V. Maximum power dissipation is rated at 41W (Tc) and 2.5W (Ta). The TO-252AA (DPAK) surface mount package is ideal for automated assembly. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in industrial and automotive power switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 41W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V |