IRFR120ATM
MOSFET N-CH 100V 8.4A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi IRFR120ATM is a 100V N-Channel power MOSFET designed for surface mount applications. This TO-252AA packaged device offers a continuous drain current of 8.4A at 25°C (Tc) and a low on-resistance of 200mOhm maximum at 4.2A and 10V Vgs. Key electrical characteristics include an input capacitance (Ciss) of 480pF maximum at 25V and a gate charge (Qg) of 22nC maximum at 10V. With a maximum power dissipation of 32W (Tc), it is suitable for demanding applications. This MOSFET utilizes Metal Oxide technology and is supplied in tape and reel packaging. Its specifications make it a component commonly found in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 4.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 32W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V |
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