IRFP450B
MOSFET N-CH 500V 14A TO3PManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi IRFP450B is a N-Channel Power MOSFET with a Drain-to-Source Voltage (Vdss) of 500 V. This device offers a continuous drain current (Id) of 14A (Tc) and a maximum power dissipation of 205W (Tc). Key electrical parameters include a maximum Rds On of 390mOhm at 7A and 10V, with a gate charge (Qg) of 113 nC (Max) @ 10 V and input capacitance (Ciss) of 3800 pF (Max) @ 25 V. The MOSFET is packaged in a TO-3P-3, SC-65-3 (TO-3P) through-hole package. Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for applications in power supply units, motor control, and lighting.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 205W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-3P |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 25 V |
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