IRFM120ATF
MOSFET N-CH 100V 2.3A SOT223-4Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi IRFM120ATF is an N-Channel Power MOSFET designed for surface mount applications. This component features a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 2.3 A at 25°C, with a maximum power dissipation of 2.4 W (Ta). The Rds On is specified at 200 mOhm maximum at 1.15 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 22 nC at 10 V, input capacitance (Ciss) of 480 pF at 25 V, and a threshold voltage (Vgs(th)) of 4 V at 250 µA. The device operates within an extended temperature range of -55°C to 150°C (TJ) and is supplied in a SOT-223-4 package, also known as TO-261-4, presented on tape and reel. This MOSFET finds application in various industrial sectors requiring efficient power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 47 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.4W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | SOT-223-4 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 480 pF @ 25 V |
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