IRF840B
MOSFET N-CH 500V 8A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi IRF840B is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 8A at 25°C. With a maximum power dissipation of 134W (Tc), the IRF840B offers a low on-state resistance of 800mOhm at 4A and 10V. Key parameters include a gate charge of 53 nC @ 10 V and input capacitance of 1800 pF @ 25 V. Operating across a temperature range of -55°C to 150°C (TJ), this device is packaged in a standard TO-220-3 configuration. It finds application in power supply units, motor control, and general switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 134W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
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