IRF530A
MOSFET N-CH 100V 14A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi IRF530A is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 14A at 25°C (Tc). With a maximum Power Dissipation (Pd) of 55W (Tc) and a low on-resistance (Rds On) of 110mOhm at 7A and 10V, it offers efficient power handling. The device has a Gate Charge (Qg) of 36 nC (Max) at 10V and an Input Capacitance (Ciss) of 790 pF (Max) at 25V. It operates across a temperature range of -55°C to 175°C (TJ). The IRF530A is packaged in a TO-220-3 through-hole configuration, making it suitable for power switching and control circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 25 V |
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