HUFA76645S3ST-F085
MOSFET N-CH 100V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi's HUFA76645S3ST-F085 is an N-Channel UltraFET™ MOSFET designed for high-power applications. This component features a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 75A at 25°C, with a maximum power dissipation of 310W under typical conditions. The Rds On is specified at a maximum of 14mOhm at 75A and 10V Vgs.
The device utilizes a surface mount TO-263 (D2PAK) package and offers a wide operating temperature range from -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 153 nC at 10V and input capacitance (Ciss) of 4400 pF at 25V. This MOSFET is AEC-Q101 qualified and designed for automotive applications. It supports drive voltages from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±16V.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 153 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
| Qualification | AEC-Q101 |
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