HUFA76645S3S
MOSFET N-CH 100V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi HUFA76645S3S is an N-Channel UltraFET™ power MOSFET designed for high-efficiency power switching applications. This device features a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 75A at 25°C, with a maximum power dissipation of 310W (Tc). The low on-resistance (Rds On) of 14mOhm at 75A and 10V Vgs, coupled with a gate charge (Qg) of 153 nC at 10V, enables efficient operation. It utilizes Metal Oxide technology and is packaged in a TO-263 (D2PAK) surface mount configuration. Operating temperature range is -55°C to 175°C (TJ). This component is commonly found in industrial power supplies, automotive electronics, and high-power motor control systems.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 153 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
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