HUFA76639S3ST
MOSFET N-CH 100V 51A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UltraFET™ HUFA76639S3ST is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 51A at 25°C (Tc), with a maximum power dissipation of 180W (Tc). The ultra-low on-resistance is specified as 26mOhm at 51A and 10V gate drive. Key parameters include a gate charge (Qg) of 86nC at 10V and input capacitance (Ciss) of 2400pF at 25V. The HUFA76639S3ST utilizes a surface mount TO-263-3, D2PAK package, suitable for efficient thermal management. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly found in power supply designs, motor control, and automotive systems.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 51A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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