HUFA76639S3S
MOSFET N-CH 100V 51A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi HUFA76639S3S is an N-Channel UltraFET™ power MOSFET designed for high-performance applications. This component features a Vds of 100V and a continuous drain current (Id) of 51A (Tc). With a low on-resistance (Rds On) of 26mOhm at 51A and 10V, and a maximum power dissipation of 180W (Tc), it is suitable for demanding power management tasks. The device operates efficiently across a wide temperature range of -55°C to 175°C (TJ) and is packaged in a TO-263-3, D2PAK surface mount configuration. Key electrical parameters include a gate charge (Qg) of 86 nC (max) at 10V and an input capacitance (Ciss) of 2400 pF (max) at 25V. Typical applications include power supplies, motor control, and automotive systems.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 51A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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