HUFA76629D3ST
MOSFET N-CH 100V 20A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi HUFA76629D3ST is an N-Channel UltraFET™ MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain current (Id) of 20A at 25°C with a maximum power dissipation of 110W (Tc). The Rds On is specified at a maximum of 52mOhm at 20A and 10V. Gate drive requirements range from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±16V. Key parameters include a gate charge (Qg) of 46nC (max) at 10V and input capacitance (Ciss) of 1285pF (max) at 25V. This device utilizes Metal Oxide technology and is housed in a TO-252AA (DPAK) surface mount package, supplied on tape and reel. Typical industries utilizing this component include automotive and industrial power management. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1285 pF @ 25 V |
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