HUFA76619D3S
MOSFET N-CH 100V 18A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUFA76619D3S is a high-efficiency N-Channel UltraFET™ power MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 18 A at 25°C, with a maximum power dissipation of 75 W (Tc). The Rds On is specified at 85 mOhm maximum at 18 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 29 nC maximum at 10 V and input capacitance (Ciss) of 767 pF maximum at 25 V. The device supports gate drive voltages from 4.5 V to 10 V and has a maximum gate-source voltage (Vgs) of ±16 V. The threshold voltage (Vgs(th)) is 3 V maximum at 250 µA. This MOSFET is housed in a TO-252AA (DPAK) surface-mount package, operating within a temperature range of -55°C to 175°C. The UltraFET™ series technology is suitable for power management in automotive, industrial, and consumer electronics sectors. It is supplied in a tube.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 767 pF @ 25 V |
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