HUFA76619D3
MOSFET N-CH 100V 18A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUFA76619D3 is an N-Channel UltraFET™ Power MOSFET designed for demanding applications. Featuring a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 18A at 25°C (Tc), this component offers robust performance. Its low on-resistance (Rds On) of 85mOhm at 18A and 10V gate-source voltage (Vgs) ensures efficient power handling with a maximum power dissipation of 75W (Tc). The device operates with a gate drive range of 4.5V to 10V and has a maximum gate-source voltage of ±16V. Key electrical characteristics include a gate charge of 29 nC at 10V and an input capacitance (Ciss) of 767 pF at 25V. Packaged in an IPAK (TO-251-3 Short Leads, TO-251AA) for through-hole mounting, the HUFA76619D3 is suitable for use in industrial and power supply applications. It maintains operation across a wide temperature range of -55°C to 175°C (TJ).
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 767 pF @ 25 V |
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