HUFA76609D3S
MOSFET N-CH 100V 10A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi HUFA76609D3S is an N-Channel UltraFET™ MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) capability of 10 A at 25°C (Tc), with a maximum power dissipation of 49 W (Tc). The on-resistance (Rds On) is specified at 160 mOhm maximum at 10 A and 10 Vgs. Key electrical parameters include a gate charge (Qg) of 16 nC maximum at 10 Vgs and an input capacitance (Ciss) of 425 pF maximum at 25 Vds. The device operates with drive voltages ranging from 4.5 V to 10 V and has a maximum gate-source voltage (Vgs) of ±16 V. The HUFA76609D3S is housed in a TO-252AA package, enabling surface mount integration. This MOSFET is suitable for use in power switching and motor control applications across various industries.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 49W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 425 pF @ 25 V |
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