HUFA76443S3S
MOSFET N-CH 60V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUFA76443S3S is an UltraFET™ N-Channel power MOSFET designed for high-performance applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C (Tc), with a maximum power dissipation of 260W (Tc). The low on-resistance of 8mOhm at 75A and 10V (Vgs) minimizes conduction losses.
Key electrical characteristics include a gate charge (Qg) of 129nC at 10V and input capacitance (Ciss) of 4115pF at 25V. The device operates with drive voltages between 4.5V and 10V, and has a maximum gate-source voltage (Vgs) of ±16V. The threshold voltage (Vgs(th)) is a maximum of 3V at 250µA. Manufactured using Metal Oxide technology, the HUFA76443S3S is housed in a TO-263-3, D2PAK surface mount package, suitable for demanding thermal environments with an operating temperature range of -55°C to 175°C. This component is utilized across various industries, including industrial power supplies and automotive systems.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 260W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 129 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4115 pF @ 25 V |
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