HUFA76443P3
MOSFET N-CH 60V 75A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi HUFA76443P3 is an UltraFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 60V drain-source voltage rating and a continuous drain current capability of 75A at 25°C, with a maximum power dissipation of 260W (Tc). The on-resistance (Rds On) is specified at a low 8mOhm at 75A and 10V Vgs. The device utilizes TO-220-3 through-hole packaging and operates within a temperature range of -55°C to 175°C. Key parameters include a gate charge (Qg) of 129 nC at 10V and input capacitance (Ciss) of 4115 pF at 25V. This MOSFET is suitable for use in industrial, automotive, and power supply designs requiring robust switching performance.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 260W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 129 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4115 pF @ 25 V |
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