HUFA76439S3ST
MOSFET N-CH 60V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UltraFET™ HUFA76439S3ST is an N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 75A at 25°C, with a maximum power dissipation of 155W (Tc). Key electrical characteristics include a low on-resistance of 12mOhm at 75A and 10V, and a gate charge (Qg) of 84 nC at 10V. The input capacitance (Ciss) is rated at a maximum of 2745 pF at 25V.
This MOSFET utilizes surface mount technology, housed in a TO-263-3, D2PAK package. It operates across a wide temperature range of -55°C to 175°C (TJ). The UltraFET™ series technology ensures efficient switching and power handling. Drive voltages range from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±16V and a threshold voltage (Vgs(th)) of 3V at 250µA. This component is suitable for use in power supply, automotive, and industrial control applications. The packaging is supplied on Tape & Reel (TR).
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 155W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2745 pF @ 25 V |
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