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HUFA76437S3S

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HUFA76437S3S

MOSFET N-CH 60V 71A D2PAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi HUFA76437S3S is an N-Channel UltraFET™ Power MOSFET designed for demanding applications requiring high current and efficient switching. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 71A at 25°C, with a maximum power dissipation of 155W (Tc). The low on-resistance of 14mOhm at 71A and 10V Vgs ensures minimal conduction losses. Key electrical characteristics include a gate charge (Qg) of 71 nC (max) at 10V and input capacitance (Ciss) of 2230 pF (max) at 25V. The device operates across a wide temperature range of -55°C to 175°C (TJ). Packaged in a TO-263-3, D2PAK (also known as TO-263AB) for surface mounting, this MOSFET is suitable for use in power supply, motor control, and automotive applications.

Additional Information

Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C71A (Tc)
Rds On (Max) @ Id, Vgs14mOhm @ 71A, 10V
FET Feature-
Power Dissipation (Max)155W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2230 pF @ 25 V

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