HUFA76432S3S
MOSFET N-CH 60V 59A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUFA76432S3S is an N-Channel UltraFET™ Power MOSFET designed for demanding applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 59A at 25°C, with a maximum power dissipation of 130W (Tc). Its low on-resistance is 17mOhm at 59A and 10V gate-source voltage. The device is housed in a TO-263-3, D2PAK surface mount package, facilitating efficient thermal management. Key characteristics include input capacitance (Ciss) of 1765pF (max) at 25V and gate charge (Qg) of 53nC (max) at 10V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in power supply, automotive, and industrial control systems.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 59A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1765 pF @ 25 V |
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