HUFA76429S3S
MOSFET N-CH 60V 47A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUFA76429S3S is an N-Channel UltraFET™ MOSFET designed for high-performance applications. Featuring a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 47A at 25°C (Tc), this component offers a low on-resistance (Rds On) of 22mOhm at 47A and 10V Vgs. The device supports a wide gate-source voltage range from ±16V, with a threshold voltage (Vgs(th)) of 3V at 250µA. Input capacitance (Ciss) is 1480pF at 25V, and gate charge (Qg) is 46nC at 10V. With a maximum power dissipation of 110W (Tc), it operates across a wide temperature range of -55°C to 175°C (TJ). Packaged in a TO-263-3, D2PAK surface mount configuration, this MOSFET is suitable for demanding power management solutions in industries such as automotive and industrial automation.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 47A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1480 pF @ 25 V |