HUFA76429D3ST-F085
MOSFET N-CH 60V 20A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi HUFA76429D3ST-F085 is an N-Channel UltraFET™ MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 20A at 25°C, with a maximum power dissipation of 110W (Tc). The UltraFET™ technology offers a low on-resistance (Rds On) of 23mOhm at 20A and 10V.
With a gate charge (Qg) of 46 nC at 10V and input capacitance (Ciss) of 1480 pF at 25V, this MOSFET is suitable for demanding drive voltages ranging from 4.5V to 10V. The device operates across a wide temperature range of -55°C to 175°C (TJ). Packaged in a TO-252AA (TO-252-3, DPAK) surface-mount configuration, it is supplied on a Tape & Reel (TR). This component finds application in various industries including automotive, industrial power supplies, and telecommunications.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1480 pF @ 25 V |