HUFA76429D3
MOSFET N-CH 60V 20A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUFA76429D3 is an UltraFET™ N-Channel Power MOSFET designed for high-performance applications. Featuring a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 20A at 25°C (Tc), this component offers a robust solution for power management. Its low on-resistance (Rds On) of 23mOhm at 20A and 10V Vgs ensures minimal conduction losses. The device supports a wide gate drive voltage range from 4.5V to 10V and has a maximum gate charge (Qg) of 46 nC at 10V. With a maximum power dissipation of 110W (Tc), it is suitable for demanding thermal environments. The HUFA76429D3 utilizes Metal Oxide technology and is housed in an IPAK (TO-251-3 Short Leads) package for through-hole mounting. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is commonly employed in industrial, automotive, and consumer electronics power switching applications.
Additional Information
Series: UltraFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1480 pF @ 25 V |
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