HUFA76423S3S
MOSFET N-CH 60V 35A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi HUFA76423S3S is an UltraFET™ N-Channel Power MOSFET designed for demanding applications. This device features a 60V drain-source breakdown voltage and supports a continuous drain current of 35A at 25°C (Tc), with a maximum power dissipation of 85W (Tc). Optimized for efficiency, its Rds(On) is specified at a maximum of 30mOhm when conducting 35A with a 10V gate-source voltage. The MOSFET offers a low gate charge of 34 nC at 10V and an input capacitance (Ciss) of 1060 pF at 25V. It is housed in a TO-263-3, D2PAK surface-mount package, suitable for efficient thermal management. Typical applications include power switching, motor control, and power supply designs across various industrial and automotive sectors. The device operates within an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 25 V |
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