HUFA76423D3ST
MOSFET N-CH 60V 20A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi UltraFET™ HUFA76423D3ST is an N-Channel MOSFET featuring a 60V drain-source voltage and a continuous drain current of 20A at 25°C. This component offers a maximum on-resistance of 32mOhm at 20A and 10V Vgs. The gate charge is specified at 34nC maximum at 10V, with input capacitance (Ciss) reaching 1060pF maximum at 25V. Designed for surface mounting, it utilizes the TO-252AA package. The device supports gate-source voltages from ±16V, with a threshold voltage (Vgs(th)) of 3V at 250µA. Power dissipation is rated at 85W (Tc). This MOSFET is suitable for applications in industrial and automotive sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 25 V |
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