HUFA76419S3ST
MOSFET N-CH 60V 29A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi HUFA76419S3ST is an N-Channel UltraFET™ Power MOSFET designed for demanding applications. This component offers a 60V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 29A at 25°C (Tc), with a maximum power dissipation of 75W (Tc). Featuring a low on-resistance of 35mOhm at 29A and 10V (Vgs), the HUFA76419S3ST ensures efficient power handling. Its typical gate charge (Qg) is 28 nC at 10V, and input capacitance (Ciss) is 900 pF at 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and is supplied in a TO-263-3, D2PAK package, suitable for surface mounting. This MOSFET is commonly utilized in power supply, motor control, and industrial automation systems.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
Request a Quote
Clients Also Buy
FDD16AN08A0
MOSFET N-CH 75V 9A/50A DPAK
FDS2734
MOSFET N-CH 250V 3A 8SOIC
FDD3672
MOSFET N-CH 100V 6.5/44A TO252AA
