HUFA76419D3
MOSFET N-CH 60V 20A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UltraFET™ HUFA76419D3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 60 V drain-source voltage (Vdss) and a continuous drain current (Id) of 20 A at 25°C, with a maximum power dissipation of 75 W. The device exhibits a low on-resistance of 37 mOhm at 20 A and 10 V, achieved with a gate-source voltage (Vgs) range of 4.5 V to 10 V. Key parameters include a gate charge (Qg) of 27.5 nC and input capacitance (Ciss) of 900 pF at 25 V. It is packaged in an IPAK (TO-251-3 Short Leads, TO-251AA) for through-hole mounting and operates across a temperature range of -55°C to 175°C. This MOSFET finds application in industrial, automotive, and consumer electronics power management systems.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 27.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 25 V |
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