HUFA76413D3S
MOSFET N-CH 60V 20A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi UltraFET™ HUFA76413D3S is a 60V N-Channel power MOSFET designed for high-efficiency switching applications. Featuring a low Rds(on) of 49mOhm at 20A and 10V, this device offers excellent conduction loss characteristics. Its continuous drain current capability is 20A (Tc), with a maximum power dissipation of 60W (Tc). The TO-252AA surface mount package facilitates integration into compact designs. Key parameters include a 645pF input capacitance (Ciss) and a 20nC gate charge (Qg), suitable for demanding power management circuits. This component finds application in industrial automation, power supplies, and automotive systems. The operating temperature range is -55°C to 175°C (TJ), and the maximum gate-source voltage is ±16V.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 49mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 645 pF @ 25 V |
Request a Quote
Clients Also Buy
FDD16AN08A0
MOSFET N-CH 75V 9A/50A DPAK
FDS2734
MOSFET N-CH 250V 3A 8SOIC
FDD3672
MOSFET N-CH 100V 6.5/44A TO252AA
