HUFA76409P3
MOSFET N-CH 60V 18A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi UltraFET™ HUFA76409P3 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a 60V drain-source breakdown voltage and a continuous drain current rating of 18A at 25°C (Tc), with a maximum power dissipation of 49W (Tc). The TO-220-3 package provides robust thermal management for through-hole mounting. Key parameters include a low on-resistance of 62mOhm at 18A and 10V, and a gate charge of 15 nC at 10V. Input capacitance (Ciss) is rated at 485 pF at 25V. This component is suitable for use in industrial power supplies, motor control, and automotive systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 62mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 49W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 485 pF @ 25 V |
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