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HUFA76407P3

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HUFA76407P3

MOSFET N-CH 60V 13A TO220-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi HUFA76407P3 is an UltraFET™ N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 13A at 25°C (Tc), with a maximum power dissipation of 38W (Tc). The TO-220-3 package offers a through-hole mounting solution suitable for thermal management. Key electrical characteristics include a maximum on-resistance (Rds On) of 92mOhm at 13A and 10V gate-source voltage, and a gate charge (Qg) of 11.3 nC at 10V. Input capacitance (Ciss) is rated at 350 pF at 25V. The operating temperature range is -55°C to 175°C (TJ). This component finds application in power supply units, motor control, and general purpose power switching across various industrial sectors.

Additional Information

Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Rds On (Max) @ Id, Vgs92mOhm @ 13A, 10V
FET Feature-
Power Dissipation (Max)38W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-220-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 25 V

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