HUFA76407D3
MOSFET N-CH 60V 12A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi HUFA76407D3 is a high-performance N-Channel UltraFET™ MOSFET designed for demanding applications. This through-hole component features a 60V drain-source breakdown voltage and a continuous drain current capability of 12A at 25°C (Tc), with a maximum power dissipation of 38W (Tc). The Rds(on) is specified at a maximum of 92mOhm at 13A and 10V Vgs. Key parameters include a gate charge of 11.3 nC at 10V and input capacitance of 350 pF at 25V. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is housed in an IPAK (TO-251-3 Short Leads, TO-251AA) package. This component is suitable for power management solutions in industrial and automotive sectors.
Additional Information
Series: UltraFET™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 92mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
Request a Quote
Clients Also Buy
FDD16AN08A0
MOSFET N-CH 75V 9A/50A DPAK
FDS2734
MOSFET N-CH 250V 3A 8SOIC
FDD3672
MOSFET N-CH 100V 6.5/44A TO252AA
