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HUFA75842S3ST

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HUFA75842S3ST

MOSFET N-CH 150V 43A D2PAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi HUFA75842S3ST is an N-Channel UltraFET™ MOSFET designed for demanding applications. This component features a 150V drain-source voltage (Vdss) and a continuous drain current (Id) of 43A at 25°C (Tc). With a low on-resistance (Rds On) of 42mOhm at 43A and 10V Vgs, it offers efficient power handling. The device is rated for 230W power dissipation (Tc) and is housed in a TO-263 (D2PAK) surface mount package. Key electrical characteristics include a gate charge (Qg) of 175 nC maximum at 20V Vgs and input capacitance (Ciss) of 2730 pF maximum at 25V Vds. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in power supply, automotive, and industrial applications. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C43A (Tc)
Rds On (Max) @ Id, Vgs42mOhm @ 43A, 10V
FET Feature-
Power Dissipation (Max)230W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs175 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds2730 pF @ 25 V

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