HUFA75652G3
MOSFET N-CH 100V 75A TO247-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi UltraFET™ HUFA75652G3 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 75A at 25°C (Tc). With a low on-resistance (Rds On) of 8mOhm at 75A and 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 515W (Tc) and a high junction temperature capability of 175°C, suitable for demanding power management systems. Key parameters include a gate charge (Qg) of 475 nC at 20V and input capacitance (Ciss) of 7585 pF at 25V. Packaged in a TO-247-3 through-hole configuration, the HUFA75652G3 finds application in industrial power supplies, automotive electronics, and high-power motor control.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 515W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 475 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7585 pF @ 25 V |
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