HUFA75645P3
MOSFET N-CH 100V 75A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi UltraFET™ HUFA75645P3 is an N-Channel Power MOSFET designed for demanding applications. This component features a Vds of 100V and a continuous drain current rating of 75A at 25°C, with a maximum power dissipation of 310W (Tc). The Rds(on) is specified at a maximum of 14mOhm at 75A and 10V gate drive. Key parameters include a gate charge (Qg) of 238nC (max) at 20V and an input capacitance (Ciss) of 3790pF (max) at 25V. Operating temperature ranges from -55°C to 175°C (TJ). The device is housed in a standard TO-220-3 package, suitable for through-hole mounting. This MOSFET is commonly utilized in industrial power supplies, motor control, and automotive applications.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 238 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3790 pF @ 25 V |
Request a Quote
Clients Also Buy
FDD16AN08A0
MOSFET N-CH 75V 9A/50A DPAK
FDS2734
MOSFET N-CH 250V 3A 8SOIC
FDD3672
MOSFET N-CH 100V 6.5/44A TO252AA
