HUFA75639S3S
MOSFET N-CH 100V 56A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi HUFA75639S3S is an N-Channel UltraFET™ Power MOSFET designed for high-performance applications. This component features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 56A at 25°C (Tc), with a maximum power dissipation of 200W (Tc). The on-resistance (Rds On) is specified at a maximum of 25mOhm at 56A and 10V gate drive. Key characteristics include an input capacitance (Ciss) of 2000pF at 25V and a gate charge (Qg) of 130nC at 20V. Manufactured using MOSFET technology and housed in a TO-263-3, D2PAK (TO-263AB) surface mount package, this device operates within a temperature range of -55°C to 175°C (TJ). The HUFA75639S3S is qualified to AEC-Q101 standards, making it suitable for automotive and industrial power management systems.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 56A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
| Qualification | AEC-Q101 |
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