HUFA75639G3
MOSFET N-CH 100V 56A TO247-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi HUFA75639G3 is an N-Channel UltraFET™ Power MOSFET designed for demanding applications. This device features a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 56A at 25°C with a maximum power dissipation of 200W (Tc). The low on-resistance (Rds On) of 25mOhm at 56A and 10V gate drive voltage, coupled with a typical gate charge (Qg) of 130 nC at 20V, ensures efficient switching performance. Input capacitance (Ciss) is rated at 2000 pF at 25V. The HUFA75639G3 is packaged in a TO-247-3 through-hole configuration and operates across an extended temperature range of -55°C to 175°C. This component is frequently utilized in power supply, motor control, and industrial automation applications.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 56A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
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