HUFA75637S3ST
MOSFET N-CH 100V 44A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi HUFA75637S3ST is an N-Channel UltraFET™ MOSFET designed for demanding applications. This component features a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 44 A at 25°C (Tc). The low on-resistance of 30 mOhm at 44 A and 10 V gate drive voltage (Vgs) ensures efficient power handling. With a maximum power dissipation of 155 W (Tc) and an operating temperature range of -55°C to 175°C, this MOSFET is suitable for high-power switching and motor control applications. The device is supplied in a TO-263 (D2PAK) surface mount package and is delivered on tape and reel. Key electrical characteristics include a gate charge (Qg) of 108 nC and input capacitance (Ciss) of 1700 pF.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 155W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 108 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
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