HUFA75637S3S
MOSFET N-CH 100V 44A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi HUFA75637S3S is an N-Channel UltraFET™ Power MOSFET featuring a 100V drain-source voltage. This component offers a continuous drain current of 44A (Tc) and a maximum power dissipation of 155W (Tc). The device exhibits a low on-resistance of 30mOhm at 44A and 10V gate-source voltage. Key parameters include input capacitance (Ciss) of 1700pF at 25V and gate charge (Qg) of 108nC at 20V. The HUFA75637S3S is packaged in a TO-263-3, D2PAK surface mount configuration and operates within a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for applications in power supply units, motor control, and automotive systems.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 155W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 108 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
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