HUFA75617D3ST
MOSFET N-CH 100V 16A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi HUFA75617D3ST is an UltraFET™ series N-Channel Power MOSFET designed for demanding applications. This component features a 100V Drain-Source Voltage (Vdss) and a continuous drain current capability of 16A (Tc) at 25°C. With a maximum on-resistance (Rds On) of 90mOhm at 16A and 10V Vgs, it offers efficient power switching. The device boasts a low gate charge (Qg) of 39 nC (max) at 20V and an input capacitance (Ciss) of 570 pF (max) at 25V. Fabricated using MOSFET technology, it supports a maximum power dissipation of 64W (Tc). The HUFA75617D3ST is housed in a TO-252AA (DPAK) surface mount package, supplied on a tape and reel. This component is suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 64W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 25 V |
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