HUFA75545S3S
MOSFET N-CH 80V 75A D2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi HUFA75545S3S is an N-Channel UltraFET™ Power MOSFET designed for high-performance applications. This component features a drain-source breakdown voltage (Vdss) of 80V and a continuous drain current (Id) of 75A at 25°C, with a maximum power dissipation of 270W (Tc). The device offers a low on-resistance (Rds On) of 10mOhm at 75A and 10V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 235 nC (max) at 20V and input capacitance (Ciss) of 3750 pF (max) at 25V. The HUFA75545S3S is housed in a TO-263 (D2PAK) surface-mount package, facilitating efficient thermal management. Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in power supply units, motor control, and automotive applications.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 270W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 235 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3750 pF @ 25 V |
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